High Dielectric Constant Materials: VLSI MOSFET ApplicationsHoward Huff, David Gilmer Springer Science & Business Media, 2005 M11 2 - 710 páginas Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond. |
Contenido
1 | |
Highk Gate Dielectric Materials | 27 |
References | 30 |
2 | 44 |
References | 86 |
3 | 87 |
4 | 94 |
SiO2 and Silicon Oxynitride | 122 |
References | 355 |
References | 375 |
8 | 380 |
References | 407 |
Issues in Metal Gate Electrode Selection | 414 |
References | 432 |
References | 471 |
Characterization and Metrology | 483 |
References | 140 |
5 | 141 |
6 | 163 |
References | 192 |
References | 219 |
References | 248 |
Designing Interface Composition and Structure | 287 |
References | 306 |
References | 517 |
Integrated Circuit Device Design Issues | 567 |
References | 603 |
References | 635 |
References | 664 |
References | 702 |
Otras ediciones - Ver todas
High Dielectric Constant Materials: VLSI MOSFET Applications Howard Huff,David Gilmer Sin vista previa disponible - 2010 |